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Auger Electron Spectroscopy (AES or Auger)
Auger Electron Spectroscopy (AES) is a surface-sensitive analytical technique that utilizes a high-energy electron beam as an excitation source. When atoms are excited by the electron beam, they can subsequently relax, resulting in the emission of "Auger" electrons. The kinetic energy of these emitted Auger electrons is characteristic of elements within the top 3-10 nm of the sample surface.
The electron beam can be scanned over variable-sized areas or focused directly on specific surface features of interest. The ability to focus the electron beam to diameters of 10-20 nm makes AES an exceptionally powerful tool for elemental analysis of small surface features. When combined with a sputtering ion gun, Auger spectroscopy can also perform compositional depth profiling.
EAG possesses unparalleled experience in handling both routine and specialized Auger analysis requests, having employed AES to solve diverse industrial analytical challenges for many years.
EAG's extensive Auger technical expertise delivers direct analytical advantages—whether analyzing sub-micron particles to identify contamination sources in wafer processing equipment, or examining defects in electronic devices to investigate root causes of failures. Auger analysis finds broad application in metallurgical research, including determining oxide layer thickness on electropolished medical devices. EAG continually leverages this expertise to help clients across multiple industries solve demanding analytical problems.
Ideal Applications of Auger Electron Spectroscopy
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Defect analysis
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Particle analysis
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Surface characterization
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Small-area depth profiling
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Thin film composition analysis
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Metallurgical investigations
Our Strengths
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Small-area analysis (minimum ~20 nm spot size)
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Exceptional surface sensitivity (3-10 nm information depth)
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Excellent depth resolution
Limitations
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Standards required for optimal quantification
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Insulating samples may present challenges
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Samples must be vacuum-compatible
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Typical detection sensitivity: 0.1-1 at%
Auger Technical Specifications
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Detected signal: Auger electrons from near-surface atoms
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Detectable elements: Li to U
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Detection limits: 0.1-1 at% (sub-monolayer capability)
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Depth resolution: 2-20 nm (in depth-profiling mode)
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Imaging/mapping: Yes
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Lateral resolution/probe size: ≥10 nm
EAG's unmatched experience in processing both conventional and specialized Auger analysis requests has enabled solutions for diverse industrial applications over decades. Our comprehensive AES expertise provides definitive analytical advantages—whether characterizing sub-micron particles to trace contamination in semiconductor tools, or investigating electronic device failures through defect analysis. Auger's utility extends to metallurgical studies, including oxide thickness measurement on medical implants, where EAG consistently applies its knowledge to resolve complex challenges across industries.