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材料和工程 >> 技术 >> 全反射X射线荧光(TXRF)

全反射X射线荧光(TXRF)

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Total Reflection X-ray Fluorescence (TXRF) Analysis

Total Reflection X-ray Fluorescence (TXRF) utilizes X-ray excitation at extremely low angles on polished wafer surfaces to determine concentrations of surface metal contaminants.

The incident angle of the X-ray beam (typically 0.05-0.5°) is set below the substrate's critical angle, limiting excitation to the sample's outermost surface (~top 80 Å, material-dependent). The emitted fluorescent signal from the sample is characteristic of the elemental contaminants present.

TXRF is a highly surface-sensitive technique specifically designed for analyzing surface metal contamination on semiconductor wafers (e.g., Si, SiC, GaAs, or sapphire).

Ideal Applications of TXRF

  • Metal surface contamination analysis on semiconductor wafers

Our Strengths

  • Trace element analysis

  • Survey analysis

  • Quantitative capability

  • Non-destructive method

  • Automated analysis

  • Full wafer analysis (up to 300 mm)

  • Compatible with various substrates including Si, SiC, GaAs, InP, sapphire, and glass

Limitations

  • Cannot detect low-Z elements (below Na on the periodic table)

  • Requires polished surfaces for optimal detection limits

TXRF Technical Specifications

  • Detected signal: Fluorescent X-rays emitted from wafer surface

  • Detectable elements: Na to U

  • Detection limits: 10⁹ - 10¹² atoms/cm²

  • Depth resolution: 30-80 Å (sampling depth)

  • Imaging/mapping: Optional

  • Lateral resolution/probe size: ~10 mm