全反射X射线荧光(TXRF)
WE KNOW HOW™
Total Reflection X-ray Fluorescence (TXRF) Analysis
Total Reflection X-ray Fluorescence (TXRF) utilizes X-ray excitation at extremely low angles on polished wafer surfaces to determine concentrations of surface metal contaminants.
The incident angle of the X-ray beam (typically 0.05-0.5°) is set below the substrate's critical angle, limiting excitation to the sample's outermost surface (~top 80 Å, material-dependent). The emitted fluorescent signal from the sample is characteristic of the elemental contaminants present.
TXRF is a highly surface-sensitive technique specifically designed for analyzing surface metal contamination on semiconductor wafers (e.g., Si, SiC, GaAs, or sapphire).
Ideal Applications of TXRF
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Metal surface contamination analysis on semiconductor wafers
Our Strengths
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Trace element analysis
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Survey analysis
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Quantitative capability
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Non-destructive method
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Automated analysis
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Full wafer analysis (up to 300 mm)
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Compatible with various substrates including Si, SiC, GaAs, InP, sapphire, and glass
Limitations
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Cannot detect low-Z elements (below Na on the periodic table)
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Requires polished surfaces for optimal detection limits
TXRF Technical Specifications
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Detected signal: Fluorescent X-rays emitted from wafer surface
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Detectable elements: Na to U
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Detection limits: 10⁹ - 10¹² atoms/cm²
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Depth resolution: 30-80 Å (sampling depth)
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Imaging/mapping: Optional
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Lateral resolution/probe size: ~10 mm