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材料和工程 >> 技术 >> X射线反射率(XRR)

X射线反射率(XRR)

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X-ray Reflectivity (XRR) Technical Overview

Principle
XRR, a technique complementary to X-ray diffraction (XRD), has become a widely-adopted analytical method for thin film and multilayer characterization. By measuring X-ray scattering at very low diffraction angles, it can characterize electron density distributions in films as thin as several tens of angstroms (Å). Through reflectivity profile modeling, XRR provides highly precise measurements of thickness, interface roughness, and layer density for both crystalline and amorphous films/multilayers - without requiring prior knowledge of optical properties (unlike spectroscopic ellipsometry).

Ideal Applications

  • High-precision thickness/density measurement of thin films
  • Film/interface roughness quantification
  • Wafer-scale film uniformity mapping
  • Porosity analysis (pore density/size) in low-k dielectric films

Our Strengths

    ✓ Full wafer analysis (up to 300mm) including irregular/large samples
    ✓ Complete wafer mapping capability
    ✓ Universal conductor/insulator analysis
    ✓ Optical property-independent thickness determination
    ✓ Minimal sample preparation requirements
    ✓ Ambient condition measurements

Limitations

   ▲ Requires basic structural knowledge (layer sequence/approximate composition) for accurate density results
   ▲ Thickness measurement requires surface/interface roughness <5nm (roughness/density still measurable on rougher samples)
   ▲ Maximum measurable thickness: ~300nm

XRR Specifications

Parameter Specification
Detected Signal Reflected X-rays
Elemental Analysis Measures electron density (element-agnostic); thickness/density derived when combined with composition data
Detection Limit 15-100Å minimum layer thickness
Depth Resolution ~1% of measured thickness
Imaging/Mapping Supported
Lateral Resolution ~1cm