TOF-SIMS

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

Technical Definition:
TOF-SIMS is a surface analysis technique that focuses a pulsed primary ion beam onto a sample surface, generating secondary ions during sputtering. Analysis of these secondary ions provides molecular, inorganic, and elemental information about surface species. For instance, TOF-SIMS can detect organic contaminants like adsorbed oils at trace levels undetectable by other techniques.

Key Capabilities:
✓ Detects all periodic table elements (including hydrogen)
✓ Provides:

• Mass spectral data

• XY-dimensional imaging

• Z-direction depth profiling

Performance Advantages:
• Extreme surface sensitivity (top 1-3 monolayers)
• Detection limits surpassing XPS and AES by orders of magnitude
• Simultaneous elemental/molecular characterization

EAG Laboratory Expertise:
As the commercial pioneer in TOF-SIMS with 30+ years' experience, EAG delivers:

• World-class data interpretation for complex datasets

• Advanced imaging (μm-scale defects/particles)

• Cluster ion beam analysis for organic materials

• Complementary depth profiling to dynamic SIMS

Typical Applications:
◉ Surface contamination analysis (pump oils, outgassing residues)
◉ Failure investigation (delamination, blistering)
◉ Process monitoring/R&D support

Technical Specifications

Strengths
✔ Molecular identification of surface compounds
✔ Unparalleled sensitivity (fractional monolayer detection)
✔ Insulator/conductor compatibility
✔ Non-destructive static analysis
✔ GCIB profiling for organic materials

Limitations
▲ Requires standards for quantification
▲ Vacuum compatibility mandatory
▲ Static mode limited to top 1-3 monolayers
▲ Potential contamination artifacts