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材料和工程 >> 技术 >> 二次离子质谱法 (SIMS)

二次离子质谱法

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Secondary Ion Mass Spectrometry (SIMS) Analysis

Technical Principle
SIMS enables detection of dopants and impurities at ultra-trace concentrations. This technique provides elemental depth profiling with resolution ranging from angstroms (Å) to tens of micrometers (μm). The sample surface is sputtered by a primary ion beam (typically O₂⁺ or Cs⁺), and the secondary ions generated during sputtering are collected and analyzed using mass spectrometers (quadrupole, magnetic sector, or time-of-flight). The detectable concentration range spans from matrix levels to sub-ppm trace levels.

Key Applications

  • Dopant and impurity depth profiling

  • Composition and impurity measurement in thin films (metals, dielectrics, SiGe, III-V, and II-VI materials)

  • Ultra-high depth resolution profiling for shallow implants and ultrathin films (ultra-low energy implants and gate oxides)

  • Bulk concentration analysis including B, C, O in Si

  • High-precision matching of process tools (e.g., ion implanters)

Advantages of SIMS

  • ppm-level or better detection sensitivity for dopants/impurities

  • Excellent detection limits and depth resolution for profiling

  • Small-area analysis capability (≥5μm)

  • Detection of all elements and isotopes including hydrogen

  • Outstanding dynamic range (up to 6 orders of magnitude)

  • Applicable for stoichiometric and compositional analysis

Limitations

  • Destructive analysis method

  • No chemical bonding information

  • Samples must be vacuum-compatible solids

Technical Specifications

  • Primary ions: O₂⁺ or Cs⁺

  • Depth resolution: Å to μm scale

  • Detection limits: Sub-ppm to matrix levels

  • Mass analyzers: Quadrupole/Magnetic Sector/Time-of-Flight

  • Lateral resolution: ≥5μm