卢瑟福背散射光谱法（RBS）

Rutherford Backscattering Spectrometry (RBS)

Technical Definition:
RBS is an ion-scattering technique for compositional thin-film analysis. Its unique capability lies in enabling quantitative analysis without reference standards. During RBS analysis, high-energy (MeV) He²⁺ ions (alpha particles) are directed onto the sample, and the energy distribution/yield of backscattered He²⁺ ions is measured at a fixed angle. Since each element's backscattering cross-section is known, quantitative compositional depth profiles can be obtained for films <1 μm thick.

Extended Capabilities:
Beyond elemental composition, RBS can assess crystalline quality in single-crystal samples through channeling techniques, detecting lattice damage or quantifying substitutional/interstitial atoms.

EAG Laboratory Expertise:
With world-class RBS instrumentation (including nuclear microprobes and tandem accelerators), EAG delivers rapid turnaround, precise data, and expert service for all thin-film types: oxides, nitrides, silicides, high-/low-k dielectrics, metal films, compound semiconductors, and dopants.

Ideal Applications:
✓ Thin-film composition/thickness
✓ Areal density determination (atoms/cm²)
✓ Film density measurement (with known thickness)

Our Strengths:
• Non-destructive compositional analysis
• Standard-free quantification
• Universal conductor/insulator analysis
• Hydrogen detection (in HFS mode)
• Enhanced light-element sensitivity (in NRA mode)

Limitations:
▲ Large analysis area (~2 mm)
▲ Information depth limited to ~1 μm

Technical Specifications: