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材料和工程 >> 技术 >> 扫描电子显微镜 (SEM)

扫描电子显微镜

WE KNOW HOW™

Scanning Electron Microscopy (SEM) provides high-resolution and high-depth-of-field images of sample surfaces and near-surface regions. SEM is one of the most widely used analytical tools because it quickly delivers highly detailed images. When equipped with an auxiliary Energy Dispersive X-ray Spectroscopy (EDS) detector, SEM also enables elemental identification across nearly the entire periodic table.

EAG employs SEM analysis when optical microscopy cannot provide sufficient image resolution or magnification. SEM excels at generating detailed surface topography images. Applications include failure analysis, dimensional analysis, process characterization, reverse engineering, and particle identification.

EAG’s expertise and breadth of experience are invaluable to the industries and clients we serve. Our hands-on service ensures clear communication of results and their implications. Clients are often present during analysis, enabling immediate sharing of data, images, and insights.

Ideal Applications of SEM

  • High-resolution surface topography imaging

  • Trace elemental analysis and particle characterization

Our Strengths

  • Fast, high-resolution imaging

  • Rapid elemental identification

  • Exceptional depth of field (~100x that of optical microscopy)

  • Versatile platform compatible with numerous auxiliary analytical techniques

  • Low-vacuum mode allows imaging of insulating and hydrated samples

Limitations

  • Planar samples may require etching for contrast enhancement

  • Size restrictions may necessitate sample sectioning

  • Ultimate resolution is highly dependent on sample chemistry and electron beam stability

  • If ultra-high vacuum (UHV) surface analysis is required, it should be performed first to avoid potential surface carbon contamination from SEM

SEM Technical Specifications

  • Detected signals: Secondary electrons (SE), backscattered electrons (BSE), X-rays, light (cathodoluminescence), and electron beam-induced current (EBIC)

  • Elements detected: B to U (in EDS mode)

  • Detection limit: 0.1–1 at%

  • EDS chemical depth resolution: 0.1–3 µm

  • Imaging/mapping: Supported

  • Lateral resolution/probe size: 10–30 Å