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Focused Ion Beam (FIB) Instrumentation

The Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image regions of interest in a sample. FIB is primarily used to create highly precise sample cross-sections for subsequent imaging via SEM, STEM, or TEM, or to perform circuit modifications. Additionally, FIB imaging can directly visualize samples by detecting secondary electrons emitted from ion or electron beam interactions. The contrast mechanism in FIB differs from that of SEM or S/TEM, enabling unique structural insights in certain cases.

A dual-beam FIB/SEM integrates both techniques into a single tool, whereas a single-beam FIB relies solely on the ion beam, with electron beam imaging performed separately using SEM, TEM, or STEM instruments.

FIB as a Sample Preparation Tool

FIB enables the precise generation of cross-sections that would otherwise be impossible to produce:

• FIB analysis has revolutionized TEM sample preparation, allowing the identification of sub-micron features and the precise fabrication of cross-sections.

• FIB-prepared lamellae are widely used in SEM microscopy, where FIB milling, SEM imaging, and elemental analysis can be performed within the same multi-technique instrument.

• FIB-prepared sections are also utilized in Auger Electron Spectroscopy (AES) for rapid, precise elemental identification of subsurface features.

• It is an ideal tool for inspecting products with small, hard-to-access features (e.g., semiconductor devices) or for subsurface particle identification.

• It is a superior alternativefor challenging cross-sectioning tasks, such as soft polymers that are difficult to polish.

Ideal Applications of FIB

• SEM, STEM, and TEM sample preparation

• High-resolution cross-sectional imaging of small, hard-to-access sample features

• Microsampling via in situ lift-out

Our Strengths

• Best method for cross-sectioning small targets

• Fast, high-resolution imaging

• Excellent particle contrast imaging

• Versatile platform compatible with many other analytical tools

Limitations

• Typically requires vacuum compatibility

• Imaging may compromise subsequent analysis

• Residual Ga (Gallium) implantation on the analysis surface

• Ion beam damage may limit image resolution

• Very small cross-sectional area

FIB Technical Specifications

• Detected signals: Electrons, secondary ions, X-rays, light (cathodoluminescence)

• Imaging/Mapping: Yes

• Lateral resolution/probe size:

  • Ion beam: 7 nm

  • Electron beam: 20 nm